Photovoltaic device with through-vias

A device comprising:

• a photovoltaic cell including a first layer of a first conductivity type formed overlying a top surface of a substrate and a second layer of a second conductivity type overlying the first layer;
• a first through substrate via (TSV) passing from the first layer through the substrate to a second surface of the substrate and not extending to the second layer;
• and
• a second TSV passing from the second layer through the first layer and the substrate to the second surface of the substrate;
• a first metallization layer underlying the second surface of the substrate, the first metallization layer including a plurality of landings, a first landing being electrically coupled to the first layer by the first TSV and a second landing being electrically coupled to the second layer by the second TSV;
• and
• a second metallization layer underlying the second surface of the substrate, the first metallization layer being between the second surface of the substrate and the second metallization layer;
• wherein the second metallization layer includes a plurality of contacts, a first contact being electrically coupled to the first landing through a first vertical conductor and a second contact being electrically coupled to the second landing through a second vertical conductor;
• and
• wherein the second metallization layer also includes an antenna formed directly below portions of the first and second layers, wherein all areas located directly above the antenna comprise no TSV.

A device comprising:

• a photovoltaic cell including a first layer of a first conductivity type overlying a top surface of a semiconductor substrate and a second layer of a second conductivity type overlying the first layer, wherein the semiconductor substrate has a thickness of at least five times a combined thickness of the first and second layers;
• a first through substrate via (TSV) passing from the first layer through the semiconductor substrate to a second surface of the semiconductor substrate and not extending to the second layer, wherein the first TSV comprises an insulating core encased in a conductive wrapper, the conductive wrapper in contact with the first layer;
• and
• a second TSV passing from, but not through, the second layer through the first layer and the semiconductor substrate to the second surface of the semiconductor substrate, wherein the second TSV comprises an insulating core encased in a conductive wrapper, the conductive wrapper in contact with the second layer.

A device comprising:

• a substrate;
• a first semiconductor layer of a first conductivity type overlying the substrate;
• a second semiconductor layer of a second conductivity type overlying the first layer, the second conductivity type opposite the first conductivity type, wherein the first and second layers comprise a photovoltaic cell;
• a plurality of first through-vias passing through the substrate from the first semiconductor layer to a bottom surface of the substrate;
• a plurality of second through-vias passing through the substrate and the first semiconductor layer from the second semiconductor layer to the bottom surface of the substrate, wherein the first and second through-vias are arranged in an array of rows and columns over a portion of a top surface of the substrate, the array including alternating ones of the first and second through-vias along each row;
• and
• a metallization layer formed adjacent the bottom surface of the substrate, a first portion of the metallization layer electrically connected to the first and second through-vias and a second portion of the metallization layer forming an antenna, wherein the antenna is formed directly below portions of the first and second semiconductor layers, and no first or second through-vias are located directly above the antenna.