Back to results
US 9,006,848 B2Granted
Nonvolatile magnetic memory device
AssigneesSK hynix Inc., Industry-University Cooperation Foundation Hanyang Univerity
InventorWan Jun Park
Life of this patent
Estimating the term…
Abstract
A nonvolatile magnetic memory device using a magnetic tunneling junction (MTJ) uses as a data storage unit an MTJ including a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer which are sequentially stacked. The free magnetic layer includes at least one soft magnetic amorphous alloy layer in which zirconium (Zr) is added to a soft magnetic material formed of cobalt (Co) or a Co-based alloy.
Claims18
A nonvolatile magnetic memory device comprising:
- a magnetic tunnel junction (MTJ), the MTJ comprising a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer,
- wherein the free magnetic layer comprises at least one soft magnetic amorphous alloy layer, the soft magnetic amorphous alloy layer including zirconium (Zr) and any of cobalt (Co) or a Co-based alloy,
- wherein the MTJ further comprises a nonmagnetic metal layer that is disposed between the nonmagnetic insulating layer and the free magnetic layer,
- wherein the free magnetic layer has a multi-layer structure, and
- wherein the multi-layer structure comprises a plurality of two-part layers repeatedly stacked on the nonmagnetic insulating layer, and wherein each of the two-part layers includes the soft magnetic amorphous alloy layer and the nonmagnetic metal layer.
2 more elements
A nonvolatile magnetic memory device comprising:
- a magnetic tunnel junction (MTJ), the MTJ comprising a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer,
- wherein the free magnetic layer comprises at least one soft magnetic amorphous alloy layer, the soft magnetic amorphous alloy layer including zirconium (Zr) and any of cobalt (Co) or a Co-based alloy,
- wherein the free magnetic layer has a multi-layer structure, and
- wherein the multi-layer structure comprises a plurality of two-part layers repeatedly stacked on the nonmagnetic insulating layer, and wherein each of the two-part layers includes the soft magnetic amorphous alloy layer and a nonmagnetic metal layer.
1 more element
Dependencies are inferred from the claim text.