High-voltage MEMS apparatus and method

A method of operating a MEMS system comprising the steps of:

• producing a high-voltage bias;
• and
• isolating the high-voltage bias using an extended-voltage isolation region, the extended-voltage isolation region residing in a semiconductor substrate, applying the high-voltage bias to a MEMS device,
• wherein, the extended-voltage isolation region comprises a native region separating an N-type well region from a P-type well region, thereby extending a breakdown voltage between the N-type and P-type well regions.

An extended voltage isolation region comprising:

• a N-type well region;
• a P-type well region;
• a substrate region of the same type as one of the N-type or P-type well regions, wherein one of the N-type or P-type well regions is in contact with the substrate region;
• and
• a native region, wherein the native region separates the N-type well region from the P-type well region, and the separation is effective to extend a breakdown voltage between the N-type well region and the P-type well region.

An extended voltage isolation region comprising:

• a N-type well region;
• a P-type well region;
• a substrate region of the same type as one of the N-type or P-type well regions, wherein one of the N-type or P-type well regions is in contact with the substrate region;
• a native region, wherein the native region separates the N-type well region from the P-type well region, and the separation is effective to extend a breakdown voltage between the N-type well region and the P-type well region;
• and
• a metal shield substantially covering the native region;
• and
• a shallow-trench isolation region substantially covering the native region;
• a P-type highly doped region, wherein the P-type highly-doped region resides in the P-type well region and encircles the native region;
• and a N-type highly doped region, wherein the N-type highly doped region resides in the N-type well region and the native region encircles the N-type highly doped region.