Power semiconductor device with reduced on-resistance and increased breakdown voltage
AssigneeInternational Rectifier Corporation
InventorTimothy D. Henson
Life of this patent
Estimating the term…
Abstract
In one implementation, a power semiconductor device includes an active region and a termination region. A depletion trench finger extends from the active region and ends in the termination region. An arched depletion trench surrounds the depletion trench finger in the termination region, the arched depletion trench enables one or both of an increased breakdown voltage and a reduced on-resistance in the power semiconductor device.
Claims20
A power semiconductor device comprising:
- an active region and a termination region;
- a depletion trench finger extending from said active region and ending in said termination region;
- an arched depletion trench surrounding said depletion trench finger in said termination region, wherein said arched depletion trench enables at least one of an increased breakdown voltage and a reduced on-resistance in said power semiconductor device.
The power semiconductor device of 9, wherein each of said depletion trench finger and said arched depletion trench includes a respective buried depletion electrode, each of said respective buried depletion electrodes being shorted to said source.
A power semiconductor device comprising:
- an active region and a termination region;
- a depletion trench finger extending from said active region and ending in said termination region;
- an arched depletion trench surrounding said depletion trench finger in said termination region;
- wherein a first distance between a side of said depletion trench finger and said arched depletion trench in said active region is substantially equal to a second distance between a tip of said depletion trench finger and said arched depletion trench in said termination region.
The power semiconductor device of 18, wherein each of said depletion trench finger and said arched depletion trench includes a respective buried depletion electrode disposed therein, each of said respective buried depletion electrodes being shorted to said source.
Dependencies are inferred from the claim text.