Electronic device comprising a conductive structure and an insulating layer within a trench

An electronic device comprising:

• a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench extends through at least approximately 50% of the thickness of the semiconductor layer to a first depth;
• a vertically-oriented doped region disposed within the semiconductor layer and extending from near the primary surface towards the substrate, the vertically-oriented doped region is positioned adjacent to the first trench;
• a first conductive structure disposed within the first trench;
• a first insulating layer disposed between the first conductive structure and the semiconductor layer;
• a channel region adjacent to the primary surface of the semiconductor layer;
• and
• a gate member that substantially overlies the primary surface of the semiconductor layer.

An electronic device comprising:

• a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a first trench and a second trench extend through at least approximately 50% of the thickness of the semiconductor layer to a first depth;
• a first conductive structure within the first trench, wherein the first conductive structure extends at least approximately 50% of the first depth of the first trench;
• a second conductive structure within the second trench, wherein the second conductive structure extends through at least approximately 50% of the thickness of the semiconductor layer;
• a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the first conductive structure;
• a first insulating layer disposed between the vertically-oriented doped region and the first conductive structure;
• a source region outside of and adjacent to the second trench, wherein the source region is spaced apart from the vertically oriented doped region by a channel region;
• and
• a second insulating layer disposed between the source region and the second conductive structure.