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US 9,006,805 B2Granted
Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChin-I Liao, Chun-Yu Chen
Life of this patent
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Abstract
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.
Claims19
A semiconductor device, comprising:
- at least two fin-shaped structures, disposed on a substrate;
- a gate structure, covering the fin-shaped structures;
- at least two epitaxial structures, disposed at one side of the gate structure and respectively directly contacting each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other;
- and
- a silicon cap, simultaneously surrounding the epitaxial structures.
2 more elements
A semiconductor device, comprising:
- at least two fin-shaped structures, disposed on a substrate;
- a gate structure, covering the fin-shaped structures;
- at least two epitaxial structures, disposed at one side of the gate structure and respectively directly contacting each fin-shaped structure, wherein there is an overlapped portion between the two adjacent epitaxial structures and each of the epitaxial structures has a width, wherein a ratio of the overlapped portion to the width of each of the epitaxial structures substantially ranges from 0.001 to 0.25;
- a silicon cap, simultaneously surrounding the epitaxial structures;
- and
- a space, located between the substrate and the epitaxial structures, wherein the space is filled with the silicon cap.
3 more elements
Dependencies are inferred from the claim text.