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US 9,006,795 B2Granted
Resistance-switching memory cells adapted for use at low voltage
AssigneeSanDisk 3D LLC
InventorsXiaoyu Yang, Roy E. Scheuerlein, Feng Li, Albert T. Meeks
Life of this patent
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Abstract
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Claims20
A memory cell comprising:
- a diode;
- and
- a resistance-switching material layer comprising Hf or Zr coupled in series with the diode, wherein the resistance-switching material layer has a thickness between 20 and 65 angstroms.
A memory cell comprising:
- a diode comprising a semiconductor material with a band gap smaller than that of silicon;
- and
- a material layer comprising Hf or Zr coupled in series with the diode, wherein the material layer has a thickness between 20 and 65 angstroms.
A memory cell comprising:
- a diode comprising a semiconductor material with a band gap smaller than that of silicon;
- and
- a dielectric material layer having a dielectric constant in a range of about 20 to about 25 coupled in series with the diode, wherein the dielectric material layer has a thickness between 20 and 65 angstroms.
Dependencies are inferred from the claim text.