Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface;
• a p-side electrode provided on the semiconductor layer;
• an n-side electrode provided on the semiconductor layer;
• an insulating film provided on the second surface side and including a first via penetrated to the p-side electrode and a second via penetrated to the n-side electrode;
• a first p-side interconnection layer provided on the insulating film and electrically connected to the p-side electrode through the first via;
• a first n-side interconnection layer provided on the insulating film, spaced from the first p-side interconnection layer, and electrically connected to the n-side electrode through the second via;
• a second p-side interconnection layer provided on the first p-side interconnection layer and having a smaller planar size than the first p-side interconnection layer;
• and
• a second n-side interconnection layer provided on the first n-side interconnection layer and having a smaller planar size than the first n-side interconnection layer,
• the first p-side interconnection layer and the first n-side interconnection layer being spaced by a gap from each other, and the second p-side interconnection layer and the second n-side interconnection layer being spaced by a gap from each other, and
• a step being formed between the first p-side interconnection layer and the second p-side interconnection layer, and between the first n-side interconnection layer and the second n-side interconnection layer, wherein the gap between the first p-side interconnection layer and the first n-side interconnection layer is not filled with an insulating material, and the gap between the second p-side interconnection layer and the second n-side interconnection layer is not filled with an insulating material.

A semiconductor light emitting device comprising:

• a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface;
• a p-side electrode provided on the semiconductor layer;
• an n-side electrode provided on the semiconductor layer;
• an insulating film provided on the second surface side and including a first via penetrated to the p-side electrode and a second via penetrated to the n-side electrode;
• a first p-side interconnection layer provided on the insulating film and electrically connected to the p-side electrode through the first via;
• a first n-side interconnection layer provided on the insulating film, spaced from the first p-side interconnection layer, and electrically connected to the n-side electrode through the second via;
• a second p-side interconnection layer provided on the first p-side interconnection layer and having a smaller planar size than the first p-side interconnection layer;
• and a second n-side interconnection layer provided on the first n-side interconnection layer and having a smaller planar size than the first n-side interconnection layer, the first p-side interconnection layer and the first n-side interconnection layer being spaced by a gap from each other, and the second p-side interconnection layer and the second n-side interconnection layer being spaced by a gap from each other, and a step being formed between the first p-side interconnection layer and the second p-side interconnection layer, and between the first n-side interconnection layer and the second n-side interconnection layer, wherein the gap between the first p-side interconnection layer and the first n-side interconnection layer is an air gap, and the gap between the second p-side interconnection layer and the second n-side interconnection layer is an air gap.