Memory device in a programmed state having a memory layer comprising conductive nanoparticles coated with an organic film formed between two conductive layers

A memory device comprising:

• a first conductive layer;
• a second conductive layer;
• a memory layer interposed between the first conductive layer and the second conductive layer;
• a transistor electrically connected to a memory element including the first conductive layer, the second conductive layer, and the memory layer, wherein:
• the memory layer includes a first portion and a second portion,
• wherein the second portion includes a composition and at least a nanoparticle including a first conductive material,
• wherein the nanoparticle is coated with an organic thin film, and provided into the composition,
• wherein the first portion comprises a second conductive material, the second conductive material is in electrical contact with the first conductive layer and the second conductive layer, and
• wherein the first portion and the second portion are in contact with the first conductive layer and the second conductive layer,
• a first partition wall and a second partition wall over the first conductive layer, the first partition wall and the second partition wall each having tapered shapes at its sides;
• and
• an insulating layer over the second conductive layer, the first partition wall and the second partition wall,
• wherein the memory layer is provided over the first conductive layer between the first partition wall and the second partition wall,
• wherein a side surface of the memory layer and a side surface of the second conductive layer are in contact with the side with the tapered shape of the first partition wall or the second partition wall,
• wherein a top of the first partition and a top of the second partition are over a top surface of the second conductive layer,
• wherein the insulating layer is in contact with a whole top surface of the second conductive layer and is in contact with the top of the first partition wall and the top of the second partition wall, and
• wherein the insulating layer is separated from the side surface of the second conductive layer by the first partition wall or the second partition wall.