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US 9,006,734 B2Granted
Thin film transistor, method of manufacturing the same, and display unit
AssigneeSony Corporation
InventorsYasuhiro Terai, Eri Fukumoto, Toshiaki Arai, Narihiro Morosawa
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Abstract
A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
Claims21
A thin film transistor comprising:
- a gate electrode including a metal layer and an interface layer;
- a gate insulating film;
- and
- an oxide semiconductor film,
- wherein the interface layer includes a metal oxide and is positioned between the gate insulating film and the metal layer.
2 more elements
A light emitting device comprising:
- a thin film transistor including
- a gate electrode including a metal layer and an interface layer,
- a gate insulating film, and
- an oxide semiconductor film, and
- an electroluminescence device,
- wherein the interface layer includes a metal oxide and is positioned between the gate insulating film and the metal layer.
3 more elements
A display device comprising:
- a thin film transistor including
- a gate electrode including a metal layer and an interface layer,
- a gate insulating film, and
- an oxide semiconductor film;
- and
- an electroluminescence device,
- wherein the interface layer includes a metal oxide and is positioned between the gate insulating film and the metal layer.
4 more elements
Dependencies are inferred from the claim text.