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US 9,006,634 B2Granted
Solid state imaging device having a photoelectric conversion layer with plural silicon germanium layers, and method of manufacturing
AssigneeKabushiki Kaisha Toshiba
InventorHiroki Sasaki
Life of this patent
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Abstract
According to one embodiment, a solid state imaging device includes a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side, and a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer.
Claims19
A solid state imaging device comprising:
- a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side;
- a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer;
- a third SiGe layer provided under the second SiGe layer in the photoelectric conversion layer and having a lower Ge concentration than the second SiGe layer;
- and
- a Si layer provided under the third SiGe layer in the photoelectric conversion layer.
2 more elements
A method of manufacturing a solid state imaging device, comprising:
- forming an insulating layer on a Si substrate;
- forming an opening portion in the insulating layer;
- forming a first SiGe layer covering the insulating layer on the Si substrate;
- forming a second SiGe layer having a higher Ge concentration than the first SiGe layer on the first SiGe layer;
- forming a third SiGe layer having a lower Ge concentration than the second SiGe layer on the second SiGe layer;
- forming a Si layer on the third SiGe layer;
- forming a photoelectric conversion layer in the first SiGe layer, the second SiGe layer, the third SiGe layer, and the Si layer;
- forming a transistor on the Si layer;
- and
- removing the Si substrate and the insulating layer.
7 more elements
A solid state imaging device comprising:
- a SiGe layer provided on a surface side of a photoelectric conversion layer from the viewpoint of an incident light side;
- and
- a Si layer provided under the SiGe layer in the photoelectric conversion layer,
- the SiGe layer including
- an upper portion provided at an uppermost layer of the SiGe layer, the upper portion including Si and Ge;
- a middle portion provided under the upper portion in the SiGe layer, the middle portion including at least Ge and having a higher Ge concentration than the upper portion;
- and
- a lower portion provided under the middle portion in the SiGe layer, the lower portion including Si and Ge and having a lower Ge concentration than the middle portion.
5 more elements
Dependencies are inferred from the claim text.