Resist remover composition and method for removing resist using the composition

A resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent selected from the group consisting of [I-i] azonitrile type carbon radical generating agent, [I-ii] azoamide type carbon radical generating agent, [I-iii] chain-like azoamidine type carbon radical generating agent selected from the group consisting of 2,2′-azobis(2-methylpropionamidine)dihydrochloride and 2,2′-azobis[N-(2-carboxyethyl)-2-methylpropionamidine]tetrahydrate, [I-iv] cyclic azoamidine type carbon radical generating agent, [I-v] azoester type carbon radical generating agent, [I-vi] azonitrile carboxylic acid type carbon radical generating agent, [I-vii] azoalkyl type carbon radical generating agent, [I-viii] macroazo type carbon radical generating agent, [I-ix] benzoin alkyl ether type carbon radical generating agent, [I-x] benzylketal type carbon radical generating agent, [I-xi] benzophenone type carbon radical generating agent, [I-xii] aminobenzoate ester type carbon radical generating agent, [I-xiii] 1,2-hydroxyalkylphenone type carbon radical generating agent, [I-xiv] 1,2-aminoalkylphenone type carbon radical generating agent, [I-xv] acylphosphine oxide type carbon radical generating agent, [I-xvi] anthraquinone type carbon radical generating agent, [I-xvii] thioxanthone type carbon radical generating agent, [I-xviii] acridone type carbon radical generating agent, [I-xix] imidazole type carbon radical generating agent, [I-xx] oxime ester type carbon radical generating agent, and [I-xxi] titanocene type carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7.