Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a processing chamber configured to house a substrate and process the substrate;
• a first heating source configured to heat the substrate to a first temperature in the processing chamber;
• a pre-reaction chamber configured to cause a reaction among a plurality of kinds of gases;
• a second heating source configured to heat an inside of the pre-reaction chamber to a second temperature equal to the first temperature or higher than the first temperature;
• a source gas supply system configured to supply a source gas containing silicon into the processing chamber;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the pre-reaction chamber;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the pre-reaction chamber;
• a pressure adjustment part configured to adjust pressures in the processing chamber and the pre-reaction chamber;
• and
• a control part configured to control the first heating source, the second heating source, the source gas supply system, the oxygen-containing gas supply system, the hydrogen-containing gas supply system, and the pressure adjustment part, so that a silicon oxide film having a specific film thickness is formed on the substrate, by repeating multiple times in the following order:
• a process of forming a silicon-containing layer on the substrate by supplying the source gas to the substrate housed in the processing chamber and heated to the first temperature;
• a process of discharging the source gas remaining in the processing chamber from the processing chamber;
• a process of oxidizing and changing the silicon-containing layer formed on the substrate to an oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and a second temperature equal to or higher than the first temperature by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a non-plasma atmosphere;
• and
• a process of discharging the reactive species, the oxygen-containing gas, and the hydrogen-containing gas remaining in the processing chamber from the processing chamber.

A non-transitory computer readable recording medium having a program for making a computer execute:

• a procedure of forming a silicon oxide film having a specific film thickness on a substrate by repeating multiple times in the following order:
• a procedure of forming a silicon-containing layer on the substrate by supplying a source gas containing silicon to the substrate housed in a processing chamber and heated to a first temperature, in a substrate processing apparatus,
• a procedure of discharging the source gas remaining in the processing chamber from the processing chamber;
• a procedure of oxidizing and changing the silicon-containing layer formed on the substrate to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and a second temperature equal to or higher than the first temperature by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a non-plasma atmosphere;
• and
• a procedure of discharging the reactive species, the oxygen-containing gas, and the hydrogen-containing gas remaining in the processing chamber from the processing chamber.