Atomic layer deposition of antimony oxide films

A method of depositing an antimony oxide layer by atomic layer deposition comprising:

• contacting a substrate in a batch reactor with an antimony precursor having the formula SbRxA3-x, where x is from 1 to 3, each R can be independently selected to be a linear, branched or cyclic, saturated or unsaturated, C1 to C12 alkyl or alkenyl group and A is a ligand comprising alkylamine, halide, amine, silyl or alkyl;
• removing excess antimony precursor;
• contacting the substrate with ozone;
• and
• removing excess ozone,
• wherein the deposition temperature is at or below about 500° C. and wherein the antimony oxide film can withstand selective etching of a second film using 1% HF, 25% H2SO4, conc. HNO3 or 2M NaOH.

A method of forming a structure on a semiconductor substrate in a reaction space comprising:

• depositing a first layer comprising a first material on the substrate;
• depositing a second layer of antimony oxide on the substrate by an atomic layer deposition process comprising alternately and sequentially contacting the substrate with an antimony precursor and an oxygen source;
• and
• exposing the first and second layer to an etchant simultaneously, such that the first or second layer is etched,
• wherein the antimony precursor has the formula SbRxA3-x, where x is from 1 to 3, each R can be independently selected to be a linear, branched or cyclic, saturated or unsaturated, C1 to C12 alkyl or alkenyl group and A is a ligand comprising alkylamine, halide, amine, silyl or alkyl.