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US 9,006,109 B2Granted
Semiconductor devices and methods for manufacturing semiconductor devices
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Martin Zgaga
Life of this patent
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Abstract
A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration.
Claims6
A method, comprising:
- performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration;
- and
- after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
- wherein the time multiplexed etching process comprises:
- performing an etching step comprising etching a surface of a first material;
- performing a depositing step comprising depositing a second material over the surface of the first material;
- and
- alternately repeating the etching step and the depositing step.
5 more elements
A method, comprising:
- performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration;
- and
- after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
- wherein at least one of the time multiplexed etching process and the etching step performed after the time multiplexed etching process comprises a dry etching step.
1 more element
A method, comprising:
- performing a time multiplexed etching process, wherein a last etching step of the time multiplexed etching process is of a first time duration;
- and
- after performing the time multiplexed etching process, performing an etching step of a second time duration, wherein the second time duration is greater than the first time duration,
- wherein the time multiplexed etching process comprises multiple etching steps, wherein each of the multiple etching steps of the time multiplexed etching process is of a respective time duration, wherein the second time duration is greater than each of the respective time durations.
1 more element
Dependencies are inferred from the claim text.