Patterned structure of semiconductor device and fabricating method thereof
AssigneeUnited Microelectronics Corp.
InventorsChih-Jung Wang, Tong-Yu Chen
Life of this patent
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Abstract
A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.
Claims11
A method for fabricating a patterned structure of a semiconductor device, comprising:
- providing a substrate comprising a first region and a second region;
- forming a plurality of sacrificial patterns respectively located in the first region and the second region;
- respectively forming a first spacer on the sidewalls of each of the sacrificial patterns;
- forming a mask layer on the substrate, wherein the mask layer covers the first spacer and the sacrificial patterns within the first region;
- trimming the first spacer within the second region to form a second spacer;
- and
- removing the mask layer.
Dependencies are inferred from the claim text.