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US 9,006,104 B2Granted
Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques
AssigneeGlobalfoundries Inc.
InventorVidmantas Sargunas
Life of this patent
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Abstract
In one example, the method includes forming a metal layer on a silicon-containing structure, after forming the metal layer, performing an ion implantation process to implant silicon atoms into at least one of the metal layer and the silicon-containing structure and performing a first millisecond anneal process so as to form a first metal silicide region in the silicon-containing structure.
Claims22
A method, comprising:
- forming a metal layer on a silicon-containing structure;
- after forming said metal layer, performing an ion implantation process to implant silicon atoms into at least one of said metal layer and said silicon-containing structure;
- performing a first millisecond anneal process at a temperature that falls within the range of 400-700° C. for a duration of less than one millisecond so as to form a first metal silicide region in said silicon-containing structure;
- and
- performing a second millisecond anneal process on said first metal silicide for a duration of less than one millisecond.
2 more elements
A method, comprising:
- forming a metal layer on a silicon-containing structure;
- after forming said metal layer, performing an ion implantation process to implant silicon atoms into at least one of said metal layer and said silicon-containing structure, wherein said ion implantation process is performed at a temperature less than or equal to −50° C.;
- performing a first millisecond anneal process for a duration of less than one millisecond so as to form a first metal silicide region in said silicon-containing structure;
- after forming said first metal silicide region, stripping portions of said metal layer;
- and
- performing a second millisecond anneal process for a duration of less than one millisecond so as to convert said first metal silicide region into a second metal silicide region that has a lower resistance than that of said first metal silicide region.
3 more elements
A method, comprising:
- forming a metal layer on a silicon-containing structure;
- after forming said metal layer, performing an ion implantation process to implant silicon atoms into at least one of said metal layer and said silicon-containing structure, wherein said ion implantation process is performed at a temperature that falls within the range of −50 to −100° C. using a dopant dose that falls within the range of 3-5 e15 atoms/cm2;
- performing a first millisecond anneal process at a temperature that falls within the range of 400-700° C. for a duration of less than one millisecond so as to form a first metal silicide region in said silicon-containing structure;
- after forming said first metal silicide region, stripping portions of said metal layer;
- and
- performing a second millisecond anneal process at a temperature that falls within the range of 600-850° C. for a duration of less than one millisecond so as to convert said first metal silicide region into a second metal silicide region that has a lower resistance than that of said first metal silicide region.
3 more elements
Dependencies are inferred from the claim text.