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US 9,006,101 B2Granted
Interconnect structure and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yu Chen, Ku-Feng Yang, Tasi-Jung Wu, Lin-Chih Huang, Yuan-Hung Liu, Tsang-Jiuh Wu, Wen-Chih Chiou
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Abstract
An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first metallization layer formed over the interlayer dielectric layer, wherein the first metallization layer comprises a first metal line and a dielectric layer formed over the first metallization layer, wherein the dielectric layer comprises a metal structure having a bottom surface coplanar with a top surface of the first metal line.
Claims19
A method comprising:
- forming an interlayer dielectric layer over a first side of a substrate;
- depositing a first dielectric layer over the interlayer dielectric layer, wherein the first dielectric layer is formed of a photo sensitive material;
- forming a first via opening in the first dielectric layer by exposing and developing the photo sensitive material of the first dielectric layer;
- depositing a second dielectric layer over the first dielectric layer, wherein the second dielectric layer is of a same material as the first dielectric layer;
- forming a first damascene opening in the first dielectric layer and the second dielectric layer by exposing and developing the first dielectric layer and the second dielectric layer;
- applying a first curing process to the first dielectric layer and the second dielectric layer;
- and
- filling the first damascene opening with a first conductive material.
5 more elements
A method comprising:
- depositing a first dielectric layer over an interlayer dielectric layer of a substrate;
- forming a first via opening in the first dielectric layer;
- depositing a second dielectric layer over the first dielectric layer, wherein the second dielectric layer is of a same material as the first dielectric layer;
- patterning the first dielectric layer and the second dielectric layer;
- developing an exposed region of the first dielectric layer and the second dielectric layer to form a first damascene opening;
- applying a first curing process to the first dielectric layer and the second dielectric layer
- depositing a barrier layer over sidewalls and a bottom of the first damascene opening;
- depositing a seed layer over the barrier layer;
- and
- filling the first damascene opening with a first conductive material using an electrochemical plating process, wherein a bottom surface of the first damascene opening is coplanar with a top surface of the interlayer dielectric layer.
7 more elements
A method comprising:
- depositing an inter-layer dielectric layer over a substrate, wherein the substrate comprises a through via;
- forming a first photo sensitive layer over the inter-layer dielectric layer;
- forming a first dual damascene opening in the first photo sensitive layer through exposing and developing the first photo sensitive layer, wherein the first dual damascene opening comprises a first via opening and a first metal line opening;
- and
- forming a first dual damascene metal structure by filling the first dual damascene opening with a first conductive material, wherein a bottom surface of the first dual damascene metal structure is coplanar with a top surface of the inter-layer dielectric layer.
2 more elements
Dependencies are inferred from the claim text.