Middle-of-the-line constructs using diffusion contact structures

A method comprising:

• providing a first diffusion region in a substrate;
• providing at least one metal1 (M1) layer of the substrate;
• providing a plurality of fin structures over the first diffusion region;
• providing first, second, and third diffusion contact structures, the first diffusion contact structure coupled to the first diffusion region, and the third diffusion contact structure coupled to a second diffusion region in the substrate;
• providing the second diffusion contact structure over at least one of the fin structures, and overlapping the first and third diffusion contact structures, the second diffusion contact structure being separated from the at least one metal1 (M1) layer of the substrate;
• coupling, via a double patterning technique, the second diffusion contact structure to the first diffusion region via the first diffusion contact structure;
• providing a diffusion gap region between the first and second diffusion regions;
• providing the second diffusion contact structure over the diffusion gap region;
• and
• coupling, via the second diffusion contact structure, the first and second diffusion regions by stitching the second diffusion contact structure to the first and third diffusion contact structures,
• wherein a portion of the second diffusion contact structure maintains a predefined distance from a gate contact,
• wherein the first and second diffusion contact structures include an overlapping area of the first and second diffusion contact structures, and the overlapping area of the first and second diffusion contact structures, in a plan view, covers less than all of the first and less than all of the second diffusion contact structures, and
• wherein the second and third diffusion contact structures include an overlapping area of the second and third diffusion contact structures, and the overlapping area of the second and third diffusion contact structures, in a plan view, covers less than all of the second and less than all of the third diffusion contact structures.