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US 9,006,092 B2Granted
Semiconductor structure having fluoride metal layer and process thereof
AssigneeUnited Microelectronics Corp.
InventorsKun-Hsien Lin, Chun-Hsien Lin, Hsin-Fu Huang
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Abstract
A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.
Claims17
A semiconductor structure, comprising:
- a substrate;
- a dielectric layer located on the substrate;
- a fluoride metal layer located on the dielectric layer;
- and
- a fluoride metal gate layer located on and directly contacting the fluoride metal layer.
2 more elements
A semiconductor process, comprising:
- providing a substrate;
- forming a dielectric layer on the substrate;
- forming a fluoride metal layer on the dielectric layer, wherein the fluoride metal layer is formed by an atomic layer deposition (ALD) process with a precursor of fluoride comprising titanium tetrafluoride (TiF4);
- and
- forming a fluoride metal gate layer directly on the fluoride metal layer.
2 more elements
Dependencies are inferred from the claim text.