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US 9,006,083 B1Granted
Epitaxially growing GaN layers on silicon (100) wafers
OwnerAnanda H. Kumarinventor
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Abstract
Methods and structures for GaN on silicon-containing substrates are disclosed, comprising a texturing process to generate a rough surface containing (111) surface, which then can act as an underlayer for epitaxial GaN. LED devices are then fabricated on the GaN layer. Variations of the present invention include different orientations of silicon layer instead of (100), such as (110) or others; and other semiconductor materials instead of GaN, such as other semiconductor materials suitable for LED devices.
Claims8
A method comprising
- providing a single crystal silicon substrate,
- wherein the silicon substrate comprises a first side having (100) crystal orientation;
- mixing glass powder with polymeric binders to form a ceramic material, wherein the glass powder has coefficient of thermal expansion (CTE) higher than that of GaN;
- disposing the ceramic material to a second side of the silicon substrate to form a composite substrate, wherein the second side is opposite to the first side;
- sintering the composite substrate to bond the ceramic material with the silicon substrate;
- wet etching the first side to form pyramidal surface textures,
- wherein the pyramidal surface textures comprise (111) crystal orientation;
- depositing a buffer layer on the pyramidal surface textures;
- depositing a layer of GaN on the buffer layer;
- wherein the GaN surface comprises (0001) crystal orientation;
- wherein the buffer layer comprises lattice matching between the (111) crystal orientation of silicon and the (0001) crystal orientation of GaN.
8 more elements
Dependencies are inferred from the claim text.