Method of manufacturing a semiconductor device including an edge area
AssigneeInfineon Technologies Austria AG
InventorsHans-Joachim Schulze, Anton Mauder, Franz Hirler
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Abstract
A method of manufacturing a semiconductor device includes providing a doped layer containing a first dopant of a first conductivity type and forming a counter-doped zone in the doped layer in an edge area surrounding an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type which is the opposite of the first conductivity type. A concentration of the second dopant is at least 20% and at most 100% of the concentration of the first dopant.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- providing a doped layer containing a first dopant of a first conductivity type;
- and
- forming a counter-doped zone in the doped layer in an edge area surrounding an element area of the semiconductor device, wherein the counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type which is the opposite of the first conductivity type, wherein a concentration of the second dopant is at least 20% and at most 100% of the concentration of the first dopant.
Dependencies are inferred from the claim text.