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US 9,005,880 B2Granted
Compositions comprising sulfonamide material and processes for photolithography
AssigneeRohm and Haas Electronic Materials LLC
InventorsDeyan Wang, Chunyi Wu, George G. Barclay, Cheng-Bai Xu
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Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Claims12
A method for processing a photoresist composition, comprising;
- (a) applying on a substrate a photoresist composition comprising:
- (i) one or more resins,
- (ii) a photoactive component, and
- (iii) one or more resins that comprise a group of the formula RS(═O)2—X—NR′2, wherein X is a group with 1 to 8 carbon atoms, R is a non-hydrogen substituent, and the groups R′ are each independently a hydrogen atom or a non-hydrogen substituent, thereby forming a photoresist layer,
- wherein the (iii) one or more resins are substantially non-mixable with the (i) one or more resins;
- and
- (b) immersion exposing the photoresist layer to radiation activating for the photoresist composition.
4 more elements
A method for processing a photoresist composition, comprising:
- (a) applying on a substrate a photoresist composition comprising:
- (i) one or more resins,
- (ii) a photoactive component, and
- (iii) one or more resins that comprise 1) a group of the formula RS(═O)2—X—NR′2, wherein X is a group with 1 to 8 carbon atoms, R is a non-hydrogen substituent, and the groups R′ are each independently a hydrogen atom or a non-hydrogen substituent, 2) one or more fluorine groups or fluorine-substituted groups, and 3) one or more photoacid-labile groups, thereby forming a photoresist layer,
- wherein the (iii) one or more resins are substantially non-mixable with the (i) one or more resins;
- and
- (b) immersion exposing the photoresist layer to radiation activating for the photoresist composition.
4 more elements
Dependencies are inferred from the claim text.