Method of forming patterns using block copolymers and articles thereof

A method for patterning a layered structure, comprising:

• forming a photoimageable layer on a horizontal surface of an underlying substrate;
• imaging the photoimageable layer to form an imaged pattern in the photoimageable layer;
• developing the imaged pattern to remove portions of the photoimageable layer to form a prepattern layer comprising unremoved portions of the photoimageable layer;
• depositing an inorganic material layer on the unremoved portions of the photoimageable layer;
• etching the inorganic material layer to expose the unremoved portions of the photoimageable layer;
• removing the unremoved portions of the photoimageable layer to provide the plurality of spaced apart inorganic material guides;
• treating the spaced apart inorganic material guides with a surface modifying material that attracts the first polymer block or repels the second polymer block of the block copolymer;
• casting a layer of a block copolymer between the spaced apart inorganic guides, the block copolymer having a χN parameter equal to or greater than about 10.5 and comprising a first polymer block and a second polymer block, wherein the first and second polymer blocks have an etch selectivity greater than 2 under a first set of etching conditions;
• annealing the layer of the block copolymer to form a plurality of cylindrical systems that are generally parallel to the horizontal surface of the substrate;
• forming a pattern by selectively removing at least a portion of the first polymer block of the block copolymer under the first set of etching conditions to provide laterally-separated features comprising the second polymer block of the block copolymer and the plurality of spaced apart inorganic guides;
• and
• transferring the pattern to the underlying substrate.