Tool for manufacturing semiconductor structures and method of use

A method of adjusting a concentration of etchant solution comprising:

• determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool;
• and
• adjusting a concentration of 40% NH4F to 49% HF in the wafer processing tool for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool based on the determined etch target for each batch of wafers,
• wherein:
• each batch of wafers enters the wafer processing tool during a single run of the wafer processing tool;
• each batch of wafers includes a plurality of wafers;
• the determining comprises:
• determining that a wafer of a first batch of the plurality of batches of wafers has a first etch target which is a smallest etch target of the plurality of wafers included in the first batch, and
• determining that a wafer of a second batch of the plurality of batches of wafers has a second etch target which is a smallest etch target of the plurality of wafers included in the second batch;
• and
• the adjusting comprises:
• for the first batch, adjusting the concentration of the 40% NH4F to 49% HF to a first predetermined concentration corresponding to the first etch target, and
• for the second batch, adjusting the concentration of the 40% NH4F to 49% HF to a second predetermined concentration corresponding to the second etch target.