Plasma monitoring method and plasma monitoring system

A plasma monitoring method comprising:

• a first plasma processing including:
• preparing a first wafer to be monitored;
• arranging and bonding a plurality of sensors on the first wafer, each of the plurality of sensors comprising:
• a substrate;
• a first electrode formed on the substrate;
• an insulating film that is formed on the first electrode and has a contact hole formed therein, the contact hole exposing a part of a surface of the first electrode;
• and
• a second electrode that is formed on the insulating film and is electrically separated from the first electrode;
• positioning the first wafer in a space where plasma is generated during the first plasma processing;
• and
• monitoring the plasma by measuring
• potentials of the first electrode and the second electrode of each of the sensors, or
• a potential difference between the first electrode and the second electrode of each of the sensors during the first plasma processing to determine charge-up;
• a second plasma processing that is performed before the first plasma processing or after the first plasma processing, the second plasma processing including:
• preparing a second wafer to be monitored;
• arranging and bonding a group of the sensors on the second wafer at a plurality of different positions on the second wafer, a total number of the group of the sensors arranged and bonded on the second wafer is different from a total number of the plurality of sensors arranged and bonded on the first wafer;
• and
• positioning the second wafer in a space where plasma is generated during the second plasma processing;
• and
• monitoring the plasma generated during the second plasma processing by measuring
• potentials of the first electrode and the second electrode of each of the group of the sensors that are arranged and bonded on the second wafer, or
• a potential difference between the first electrode and the second electrode of each of the group of the sensors that are arranged and bonded on the second wafer to determine charge-up;
• and
• determining a dependence of charge-up on a pattern-ratio by comparing charge-up changes during the first plasma processing and the second plasma processing.