Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate

A method for producing a power semiconductor module, the method comprising:

• providing a plate having a top side and an underside opposite the top side;
• forming one or more depressions in the plate, each of the depressions extending into the plate proceeding from the top side so that a thickness of the plate is locally reduced in a region of the depressions;
• bending the plate so that the plate is provided with a curvature;
• arranging a circuit carrier above the depressions on the top side of the plate;
• and
• connecting the circuit carrier to the plate such that the depressions are interposed between the circuit carrier and the underside of the plate.

A power semiconductor module, comprising:

• a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression;
• and
• a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate,
• wherein the circuit carrier only partly covers the depression in the baseplate.

A power semiconductor module, comprising:

• a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression;
• and
• a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate,
• wherein the depression in the baseplate comprises a trench closed in a ring-shaped manner.

A power semiconductor module, comprising:

• a baseplate having a top side, an underside, and a depression formed in the baseplate, the depression extending into the baseplate proceeding from the top side, a thickness of the baseplate being locally reduced in a region of the depression;
• and
• a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate,
• wherein the depression in the baseplate comprises two trenches which cross one another.