Patterned ground shield structures and semiconductor devices
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsXining Wang, Jenhao Cheng, Ling Liu
Life of this patent
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Abstract
A patterned ground shield structure is provided. The patterned ground shield structure includes a substrate having a dielectric layer. The patterned ground shield structure also includes a plurality of conductive rings having a plurality of sub conductive rings in the dielectric layer. Further, the patterned ground shield structure includes an interconnection line connecting with all of the sub conductive rings in the dielectric layer. Further, the patterned ground shield structure also includes a ground ring connecting with the interconnection line.
Claims20
A patterned ground shield structure, comprising:
- a substrate;
- a dielectric layer on the substrate;
- at least one level of conductive rings, the at least one level includes one or more levels of conductive rings in the dielectric layer, one level of conductive rings in the substrate, or a combination thereof, wherein each level of the at least one level includes:
- a plurality of conductive rings, each conductive ring of the plurality of conductive rings having a plurality of sub conductive rings, wherein:
- one conductive ring of any two conductive rings is surrounded by the other conductive ring of the two conductive rings;
- one sub conductive ring of any two sub conductive rings is surrounded by the other sub conductive ring of the two sub conductive rings;
- and
- each sub conductive ring of the plurality of sub conductive rings is cut into two sub conductive ring units by two openings;
- a first interconnection line electrically connecting with a first plurality of sub conductive ring units in a level of the at least one level of conductive rings, and a second interconnection line electrically connecting with a second plurality of sub conductive ring units in the level;
- and
- a ground ring connecting with the first interconnection line and the second interconnection line.
A semiconductor device, comprising:
- an inductor device;
- and
- a patterned ground shield structure under the inductor device,
- wherein:
- the patterned ground shield structure includes:
- a substrate;
- a dielectric layer on the substrate;
- at least one level of conductive rings, the at least one level includes one or more levels of conductive rings in the dielectric layer, one level of conductive rings in the substrate, or a combination thereof, wherein each level of the at least one level includes:
- a plurality of conductive rings, each conductive ring of the plurality of conductive rings having a plurality of sub conductive rings, wherein:
- one conductive ring of any two conductive rings is surrounded by the other conductive ring of the two conductive rings;
- one sub conductive ring of any two sub conductive rings is surrounded by the other sub conductive ring of the two sub conductive rings;
- and
- each sub conductive ring of the plurality of sub conductive rings is cut into two sub conductive ring units by two openings;
- a first interconnection line electrically connecting with a first plurality of sub conductive ring units in a level of the at least one level of conductive rings, and a second interconnection line electrically connecting with a second plurality of sub conductive ring units in the level;
- and
- a ground ring connecting with the first interconnection line and the second interconnection line.
Dependencies are inferred from the claim text.