Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration

An integrated semiconductor device structure, comprising:

• a substrate;
• a complementary metal oxide semiconductor (CMOS) device positioned on the substrate;
• wiring coupled to the COM device;
• a contact extending from the wiring down toward the substrate;
• an electromechanical device including an anchor and a cantilever beam connected to the anchor, the anchor coupled to the contact, the anchor and the cantilever beam positioned above the substrate, the cantilever beam extending from the anchor and is enabled for mechanical movement;
• a protective layer encapsulating the electromechanical device, a portion of the protective layer positioned directly below the anchor and between the anchor and the substrate;
• and
• a barrier layer separating the electromechanical device and the CMOS device, wherein the barrier layer has a higher etch grade than the protective layer.