US 9,000,536 B2 · Fin field effect transistor having a highly doped region

Abstract

The present disclosure relates a Fin field effect transistor (FinFET) device having large effective oxide thickness that mitigates hot carrier injection, and an associated method of formation. In some embodiments, the FinFET device has a conductive channel of a first fin protruding from a planar substrate. The conductive channel has a non-conductive highly doped region located along multiple outer edges of the channel region. A gate region protrudes from the planar substrate as a second fin that overlies the first fin. A gate dielectric region is located between the non-conductive highly doped region and the gate region. The non-conductive highly doped region and the gate dielectric region collectively provide for an effective oxide thickness of the FinFET device that allow a low electric field across gate oxide and less hot carrier injection.

Claims20

Dependent claims

A Fin field effect transistor (FinFET) device, comprising:

a first fin of semiconducting material protruding from a semiconductor substrate, wherein the first fin of semiconducting material comprises a channel region and a highly doped region located along multiple outer edges of the channel region;
a gate region protruding from the semiconductor substrate as a second fin that overlies the first fin of semiconducting material;
and
a gate dielectric layer located between the highly doped region and the gate region;
wherein the highly doped region is vertically and laterally arranged between the channel region and the gate dielectric layer.

2 more elements

Dependencies are inferred from the claim text.

Fin field effect transistor having a highly doped region

Life of this patent

Fin field effect transistor having a highly doped region

Life of this patent

Abstract

Claims20