Light emitting diode with wave-shaped Bragg reflective layer and method for manufacturing same

A method for manufacturing a light emitting diode, comprising:

• providing a substrate;
• forming a first undoped gallium nitride (GaN) layer on the substrate;
• forming a plurality of ion implanted areas in an upper surface of the first undoped GaN layer;
• forming a plurality of second undoped GaN layers on the upper surface of the first undoped GaN layer and upper surfaces of the ion implanted areas, each of the second undoped GaN layers being island shaped, a gap being provided between each two adjacent second undoped GaN layers to expose part of the upper surface of a corresponding one of the ion implanted areas;
• forming a Bragg reflective layer on upper surfaces of the second undoped GaN layers and portions of the upper surfaces of the ion implanted areas not covered by the second undoped GaN layers;
• and
• forming an n-type GaN layer, an active layer and a p-type GaN layer on an upper surface of the Bragg reflective layer in that sequence.

A light emitting diode, comprising:

• a substrate;
• a first undoped gallium nitride (GaN) layer formed on the substrate, the first undoped GaN layer having a plurality of ion implanted areas in an upper surface thereof;
• a plurality of second undoped GaN layers formed on the first undoped GaN layer, each of the second undoped GaN layers having a trapezoidal cross-section and partly covering at least one corresponding ion implanted area;
• a Bragg reflective layer, having a wave-shaped cross-section and formed on the second undoped GaN layers and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers;
• and
• an n-type GaN layer, an active layer and a p-type GaN layer formed on an upper surface of the Bragg reflective layer in that sequence.