Method of conducting a direction-specific trimming process for contact patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing Chyi Liu, Shih-Chang Liu, Chia-Shiung Tsai
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Abstract
The present disclosure discloses a method of fabricating a semiconductor device. A first layer is formed over a substrate. A patterned second layer is then formed over the first layer. The patterned second layer includes an opening. A spacer material is then deposited in the opening, thereby reducing the opening in a plurality of directions. A direction-specific trimming process is performed to the spacer material and the second layer. Thereafter, the first layer is patterned with the second layer.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first layer over a top surface of a substrate;
- forming a second layer over the first layer;
- etching the second layer to form an opening in the second layer in a manner such that the opening of the second layer tapers from a first width;
- performing a direction-specific trimming process to the second layer,
- wherein the direction-specific trimming process removes material from the second layer faster along a first direction than along a second direction that is perpendicular to the first direction, and
- wherein the first direction and the second direction are each parallel to the top surface of the substrate;
- and
- thereafter patterning the first layer with the second layer.
A method of fabricating a semiconductor device, the method comprising:
- receiving a substrate having a fin structure extending therefrom, wherein the fin structure extends on the substrate along a first axis and along a second axis perpendicular to the first axis wherein the first axis and the second axis are parallel to a top surface of the substrate;
- forming a first layer over the substrate and over the fin structure;
- forming a second layer over the first layer, wherein the second layer includes an opening disposed directly above the fin structure;
- and
- performing a directional removal process on the second layer whereby the opening is enlarged more along the first axis than along the second axis.
A method of fabricating a semiconductor device, the method comprising:
- receiving a substrate having a top surface and having a plurality of fins disposed on the top surface;
- forming a first material layer over the substrate and over the plurality of fins;
- forming a second material layer over the first layer;
- etching an opening in the second material layer, wherein the opening is disposed directly over each fin of the plurality of fins;
- and
- selectively etching the second material layer to enlarge the opening along a first direction that is parallel to the top surface and that is perpendicular to each fin of the plurality of fins without enlarging the opening along a second direction that is parallel to the top surface and perpendicular to the first direction.
Dependencies are inferred from the claim text.