Method for manufacturing reflective mask and apparatus for manufacturing reflective mask
AssigneeShibaura Mechatronics Corporation
InventorsKatsuhiro Yamazaki, Kensuke Demura
Life of this patent
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Abstract
According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.
Claims17
A method for manufacturing a reflective mask comprising:
- forming a reflection layer on a major surface of a substrate;
- forming a capping layer containing ruthenium on the reflection layer;
- forming an absorption layer on the capping layer;
- forming a pattern region in the absorption layer;
- removing a first resist mask used in forming the pattern region;
- and
- forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer,
- the removing the first resist mask used in forming the pattern region including:
- performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.
Dependencies are inferred from the claim text.