Chemical mechanical polishing composition having chemical additives and methods for using same

A method of a selective chemical mechanical polishing comprising steps of:

• a) providing a semiconductor substrate having a surface containing a first material and at least one second material;
• b) providing a polishing pad;
• c) providing a chemical mechanical polishing composition consisting of:
• 1) about 0.05 weight % to about 30 weight % abrasive;
• 2) about 0.025 weight % to 5.0 weight % chemical additive;
• 3) about 0.0001 weight % to about 0.03 weight % of a biocide;
• 4) about 0.0 weight % to about 2.0 weight % of a pH buffering agent;
• 5) optionally about 0.0001 weight % to about 1 weight % of a surfactant selected from the group consisting of ethoxylated saturated and unsaturated alcohols;
• and
• 6) remaining is substantially liquid carrier;
• wherein the chemical additive is a substituted 4-morpholine derivative having a general molecular structure of:
• wherein R is selected from the group consisting of alkyl, alkoxy, substituted organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine, and combinations thereof;
• and
• pH of the chemical mechanical polishing composition is from about 2.0 to about 8;
• d) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition;
• and
• e) polishing the surface of the semiconductor substrate to selectively remove the first material;
• wherein at least a portion of the surface containing the first material is in contact with both the polishing pad and the chemical mechanical polishing composition;
• ratio of removal rate of the first material to removal rate of the second material is equal to or greater than 1.