Chamber cleaning method

A chamber cleaning method for removing a CF-based deposit containing at least one of Si and metal adhered to an outer periphery of a table-shaped electrostatic chuck which is installed in a chamber of a substrate processing apparatus configured to perform a plasma process on a substrate and is configured to mount the substrate thereon, the method comprising:

• supplying a mixed gas of an oxygen gas and a fluorine-containing gas toward the outer periphery of the electrostatic chuck,
• supplying a mask gas toward a central portion of the electrostatic chuck,
• irradiating a first plasma generated from the mixed gas only to the outer periphery of the electrostatic chuck so as to remove the deposit, and
• irradiating a second plasma generated from the mask gas only to the central portion of the electrostatic chuck,
• wherein the mask gas is supplied simultaneously with the mixed gas, and the second plasma is irradiated simultaneously with the first plasma, so that the first plasma is suppressed from being irradiated to the central portion of the electrostatic chuck, and
• the mask gas includes at least an oxygen gas and wherein the substrate processing apparatus includes an upper electrode made of Si or SiC and positioned above the electrostatic chuck to face the electrostatic chuck with a space formed therebetween, and wherein a cleaning time for removing the deposit is set to be in a range from 10 seconds to 180 seconds,
• a DC voltage in a range from −150 V to −300 V is applied to the upper electrode only for 10 seconds to 20 seconds in the beginning of cleaning, and
• during a remaining cleaning time after applying the DC voltage in the range from −150 V to −300 V, a DC voltage in a range from −80 V to −100 V is applied to the upper electrode.