Spacer formation for array double patterning

An apparatus for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and the periphery area, comprising:

• a plasma processing chamber, comprising:
• a chamber wall forming a plasma processing chamber enclosure;
• a substrate support for supporting a substrate within the plasma processing chamber enclosure;
• a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;
• at least one antenna for providing power to the plasma processing chamber enclosure for sustaining a plasma;
• at least one bias electrode for providing a bias voltage;
• a gas inlet for providing gas into the plasma processing chamber enclosure;
• and
• a gas outlet for exhausting gas from the plasma processing chamber enclosure;
• a gas source in fluid connection with the gas inlet, comprising;
• a trimming gas source;
• an inorganic layer deposition gas source;
• an etch back gas source;
• and
• a stripping gas source;
• a controller controllably connected to the gas source, the at least one antenna, and at least one bias electrode, comprising:
• at least one processor;
• and
• non-transitory computer readable media, comprising
• computer readable code for trimming the patterned organic mask;
• computer readable code for depositing an inorganic layer over the patterned organic mask where a thickness of the inorganic layer over the periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask;
• computer readable code for etching back the inorganic layer to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed;
• and
• computer readable code for stripping the organic mask exposed in the array area, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area.