Device and process for chemical vapor phase treatment

Device for treating substrates, comprising:

• a chamber having controlled pressure and temperature,
• a substrate support which is provided in the chamber,
• wherein the chamber comprises:
• a first gas inlet and an upper chamber wall which is provided with a plurality of first holes which are coupled to the first gas inlet and a plurality of second holes which are coupled to a second gas inlet, the first holes and the second holes opening in the chamber and being regularly distributed in the upper chamber wall,
• a heating element which is capable of heating the upper chamber wall and
• a gas discharge ring which is provided between the upper chamber wall and the substrate support, said heating element having a lower portion comprising a spiral channel, the upper chamber wall being electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper chamber wall and the substrate support;
• wherein the heating element is provided above the upper chamber wall in order to heat the upper chamber wall and the inlets;
• wherein the device comprises a body which defines a recess in a face and a cover which closes the recess at that face in order to form said chamber, wherein the cover comprises a main portion, wherein the upper chamber wall is held between the main portion of the cover and said gas discharge ring, wherein said main portion of the cover comprises a circular concavity which is provided from the main surface thereof opposite the chamber, and wherein said heating element is arranged in said circular concavity.