A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
Drawings
Claims20
A lithographic apparatus comprising:
a support configured to support a patterning device;
a substrate table configured to hold a substrate;
a projection system configured to transfer a pattern from the patterning device into a target portion of the substrate;
and
a control module configured to periodically retrieve measurements defining baseline control parameters from one or more reference substrates and to determine parameter drift from the baseline control parameters, wherein the control module is further configured to:
perform multiple patterning passes on at least one reference substrate,
precede each one of the multiple patterning passes with an alignment process, and
average overlay measurements corresponding to the multiple patterning passes to reduce impact of the alignment processes.
5 more elements
A method of producing at least one reference substrate for a lithographic apparatus, the reference substrate being usable in combination with a control module which periodically retrieves measurements from the least one reference substrate which define baseline control parameters, so as to aid scanning control during a lithographic process by determining parameter drift from the baseline control parameters,
performing multiple patterning passes on the at least one reference substrate, the multiple patterning passes comprising applying a pattern repeatedly at a plurality of target portions of the at least one reference substrate;
performing an alignment process prior to each one of the multiple patterning passes;
and
averaging overlay measurements corresponding to the multiple patterning passes to reduce impact of the alignment processes.
1 more element
A non-transitory computer program product comprising a computer program operable to cause a lithography apparatus to carry out the method comprising:
producing at least one reference substrate for a lithographic apparatus, the reference substrate being usable in combination with a control module which periodically retrieves measurements from the least one reference substrate which define baseline control parameters, so as to aid scanning control during a lithographic process by determining parameter drift from the baseline control parameters;
performing multiple patterning passes on the at least one reference substrate, the multiple patterning passes comprising applying a pattern repeatedly at a plurality of target portions of the at least one reference substrate;
performing an alignment process prior to each one of the multiple patterning passes;
and
averaging overlay measurements corresponding to the multiple patterning passes to reduce impact of the alignment processes.
13/010,409Filed 20 Jan 2011 · us provisional application
Priority
19 Feb 2010
Published
US 2011/0205520 A125 Aug 2011
Granted
3 Feb 2015
Term ends
14 Feb 2033Estimated · howhide20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 756 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.
Photomechanical production of textured or patterned surfaces
Life of this patent
About 6 years 4 months of term left · ends 14 Feb 2033 (estimated)
Priority19 Feb 2010
Filed20 Jan 2011
Granted3 Feb 2015
Today12 Oct 2026
Term ends14 Feb 2033
Priority19 Feb 2010
Granted3 Feb 2015
Term ends14 Feb 2033
Priority claimedParent application 61/306,052
Application filedUS 13/010,409
Assigned to Asml Netherlands B.V.assignment of assignor's interest
PublishedUS 2011/0205520 A1
GrantedUS 8,947,643 B2
TodayWithin its term
Term endsEstimated, includes 756 days of adjustment
Description7,368 words
Summary1,131 words
#Embodiments of the present invention relate to methods and apparatus usable, for example, in the manufacture of devices by lithographic techniques.
#A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a “mask” or a “reticle,” may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called “steppers,” in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called “scanners,” in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
#In order to monitor the lithographic process, parameters of the patterned substrate are measured. Parameters may include, for example, the overlay error between successive layers formed in or on the patterned substrate and critical linewidths of developed photosensitive resist. This measurement may be performed on a product substrate and/or on a dedicated metrology target. There are various techniques for making measurements of the microscopic structures formed in lithographic processes, including the use of scanning electron microscopes and various specialized tools. A fast and non-invasive form of specialized inspection tool is a scatterometer in which a beam of radiation is directed onto a target on the surface of the substrate and properties of the scattered or reflected beam are measured. By comparing the properties of the beam before and after it has been reflected or scattered by the substrate, the properties of the substrate can be determined. This can be done, for example, by comparing the reflected beam with data stored in a library of known measurements associated with known substrate properties. Two main types of scatterometers are known. Spectroscopic scatterometers direct a broadband radiation beam onto the substrate and measure the spectrum (intensity as a function of wavelength) of the radiation scattered into a particular narrow angular range. Angularly-resolved scatterometers use a monochromatic radiation beam and measure the intensity of the scattered radiation as a function of angle.
Brief description of the drawings5 figures
#The accompanying drawings, which are incorporated herein and form part of the specification, illustrate embodiments of the present invention and, together with the description, further serve to explain the principles of embodiments of the invention and to enable a person skilled in the relevant art(s) to make and use embodiments of the present invention.
#FIG. 1 depicts an example lithographic apparatus, which may be used with embodiments of the present invention.
#FIG. 2 depicts an example lithographic cell or cluster, which may be used with embodiments of the present invention.
Detailed description6,092 words
#The features and advantages of embodiments of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and/or structurally similar elements. The drawing in which an element first appears is indicated by the leftmost digit(s) in the corresponding reference number.
#This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiment(s) merely exemplify the invention. The scope of the invention is not limited to the disclosed embodiment(s). The invention is defined by the claims appended hereto.
#The embodiment(s) described, and references in the specification to “one embodiment”, “an embodiment”, “an example embodiment”, etc., indicate that the embodiment(s) described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is understood that it is within the knowledge of one skilled in the relevant art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.