Semiconductor device and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSang Ho Sohn
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode bowing profiles having different heights, such that a spatial margin between the lower electrodes is assured and a bridge fail is prevented, resulting in improved device operation characteristics. The semiconductor device includes a first storage node contact plug and a second storage node contact plug formed over a semiconductor substrate, wherein the second storage node contact plug is arranged at a height different from that of the first storage node contact plug, and a lower electrode formed over the first storage node contact plug and the second storage node contact plug.
Claims12
A semiconductor device comprising:
- a first storage node contact plug and a second storage node contact plug disposed over a semiconductor substrate, wherein the second storage node contact plug is arranged at a height different from that of the first storage node contact plug;
- a first lower electrode coupled to the first storage node contact plug, the first lower electrode being included in a first capacitor;
- and
- a second lower electrode coupled to the second storage node contact plug, the second lower electrode being included in a second capacitor,
- wherein a bottom surface of the first lower electrode is disposed lower than a bottom surface of the second lower electrode.
A semiconductor device comprising:
- a first lower storage electrode having a first bowed profile at a sidewall and coupled to a first storage node contact plug, the first lower storage electrode being included in a first capacitor;
- and
- a second lower storage electrode having a second bowed profile at a sidewall and coupled to a second storage node contact plug, the second lower storage electrode being included in a second capacitor,
- wherein the first bowed profile and the second bowed profile are disposed at different levels from each other, and
- wherein a bottom surface of the first lower storage electrode is disposed at a lower level than a bottom surface of the second lower storage electrode.
Dependencies are inferred from the claim text.