US 8,946,716 B2Granted

Capacitor structure of gate driver in panel

AssigneeChunghwa Picture Tubes, Ltd.

InventorsShih-Chieh Lin, Wen-Chuan Wang, Wei-Lien Sung, Bo-Han Chu

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Abstract

A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on the first dielectric layer and coupled to the first metal layer. The second dielectric layer covers the second metal layer. The first transparent capacitor electrode layer is disposed on the first dielectric layer and connected to the second metal layer. The second transparent capacitor electrode layer is disposed on the second dielectric layer and coupled to the first metal layer, in which the second and first transparent capacitor electrode layers are arranged to be stacked in a thickness direction and mutually opposed across the second dielectric layer therebetween.

Claims4

Dependent claims

A capacitor structure of gate driver in panel, comprising:

a first metal layer;
a first dielectric layer covering the first metal layer and including a first opening exposing a portion of the first metal layer;
a second metal layer disposed on the first dielectric layer, and a portion of the second metal layer is coupled to the first metal layer through the first opening;
a second dielectric layer covering the second metal layer and including a second opening disposed above the first opening exposing the portion of the second metal layer;
a first transparent capacitor electrode layer disposed on the first dielectric layer and connected to another portion of the second metal layer;
and
a second transparent capacitor electrode layer disposed on the second dielectric layer and coupled to the first metal layer through the second opening, wherein the second transparent capacitor electrode layer and the first transparent capacitor electrode layer are arranged to be stacked in a thickness direction and mutually opposed across the second dielectric layer therebetween.

4 more elements

Dependencies are inferred from the claim text.