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US 8,946,091 B2Granted
Prevention of line bending and tilting for etch with tri-layer mask
AssigneeLam Research Corporation
InventorsYoun-Jin Oh, Kenji Takeshita, Hitoshi Takahashi
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Abstract
A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.
Claims18
A method for etching features in an etch layer, comprising:
- etching an organic mask layer, using a hard mask as an etch mask;
- completely removing the hard mask, by selectively etching the hard mask with respect to the organic mask and etch layer;
- etching features in the etch layer, using the organic mask as an etch mask,
- wherein the hard mask defines wider lines and narrower lines adjacent to the wider lines, and wherein the removing the hard mask reduces tilting during the etching the etch layer.
1 more element
A method for etching features in an etch layer disposed below an organic mask layer, disposed below a hard mask layer, disposed below a patterned photoresist mask, comprising:
- etching the hard mask layer using the patterned photoresist mask as an etch mask to form a hard mask;
- etching the organic mask layer, using the hard mask as an etch mask, comprising;
- providing a hydrogen free organic etch gas;
- forming the hydrogen free organic etch gas into a plasma;
- and etching the organic mask using the plasma;
- completely removing the hard mask, by selectively etching the hard mask with respect to the organic mask and etch layer, wherein the hard mask defines wider lines and narrower lines adjacent to the wider lines, and wherein the removing the hard mask reduces tilting during the etching the etch layer;
- and
- etching features in the etch layer, using the organic mask as an etch mask.
5 more elements
Dependencies are inferred from the claim text.