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US 8,946,082 B2Granted
Methods for forming semiconductor devices
AssigneeGlobalfoundries Inc.
InventorErrol T. Ryan
Life of this patent
Estimating the term…
Abstract
Embodiments of methods for forming a semiconductor device are provided. The method includes forming a metal layer overlying a dielectric material. A thickness of the metal layer is reduced including oxidizing an exposed outer portion of the metal layer to form a metal oxide portion overlying a remaining portion of the metal layer and removing the metal oxide portion.
Claims20
A method for forming a semiconductor device, the method comprising:
- forming a metal layer overlying a dielectric material in an interconnect structure portion of an integrated circuit;
- and
- reducing a thickness of the metal layer including:
- oxidizing an exposed outer portion of the metal layer to form a metal oxide portion overlying a remaining portion of the metal layer;
- and
- removing the metal oxide portion in the interconnect structure portion of the integrated circuit.
3 more elements
A method for forming a semiconductor device, the method comprising:
- depositing a metal material over a dielectric material in an interconnect structure portion of an integrated circuit to form a metal layer;
- oxidizing an exposed outer portion of the metal layer to form a metal oxide portion overlying a remaining portion of the metal layer;
- and
- selectively etching the metal oxide portion and leaving the remaining portion of the metal layer overlying the dielectric material to define an ultrathin metal layer in the interconnect structure portion of the integrated circuit.
1 more element
A method for forming a semiconductor device, the method comprising:
- forming a trench in a dielectric material in an interconnect structure portion of an integrated circuit;
- depositing a metal layer in the trench overlying the dielectric material;
- reducing a thickness of the metal layer including:
- oxidizing an exposed outer portion of the metal layer to form a metal oxide portion overlying a remaining portion of the metal layer;
- and
- removing the metal oxide portion to form a liner in the trench defined by the remaining portion of the metal layer in the interconnect structure portion of the integrated circuit,
- depositing a metal seed forming material onto the liner to form a metal seed layer overlying the liner;
- and
- depositing a conductive metal material onto the metal seed layer to at least partially fill the trench.
6 more elements
Dependencies are inferred from the claim text.