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US 8,946,063 B2Granted
Semiconductor device having SSOI substrate with relaxed tensile stress
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Ali Khakifirooz, Pranita Kerber, Alexander Reznicek
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Abstract
A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
Claims16
A method for fabricating a semiconductor device, comprising:
- forming a tensile SSOI layer on a buried oxide layer, the buried oxide layer being on a bulk substrate;
- forming a plurality of fins in the SSOI layer;
- removing a portion of the fins;
- annealing a remaining portion of the fins to relax a tensile strain of the fins;
- and
- merging the remaining portions of the fins;
- wherein merging the remaining portions of the fins comprises epitaxially growing at least one of Si and SiGe on the fins;
- and
- wherein epitaxially growing at least one of Si and SiGe on the fins comprises depositing at least one of Si and SiGe on the fins and heating the fins to a temperature of about 500 degrees to about 850 degrees for about 20 minutes to about 40 minutes.
6 more elements
A method for fabricating a semiconductor device, comprising:
- attaching a tensile SSOI layer to a first surface of a substrate;
- forming a plurality of fins in the SSOI layer;
- forming a gate across and transverse to the plurality of fins;
- removing at least a portion of the fins using an etching technique;
- subjecting remaining portions of the fins to an elevated temperature to relax a tensile strain of the fins;
- merging the remaining portions of the fins on a source side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged source region;
- and
- merging the remaining portions of the fins on a drain side of the gate using an epitaxial growth of at least one of Si and SiGe on the fins to form a merged drain region.
5 more elements
Dependencies are inferred from the claim text.