Semiconductor device comprising a buried capacitor formed in the contact level
AssigneeGlobalfoundries Inc.
InventorsDmytro Chumakov, Tino Hertzsch
Life of this patent
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Abstract
In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced transistors, as one capacitor electrode, while the other capacitor electrode is provided in the form of a buried electrode in the dielectric material of the contact level. To this end, dielectric material may be deposited so as to reliably form a void, wherein, at any appropriate manufacturing stage, a capacitor dielectric material may be provided so as to separate the capacitor electrodes.
Claims16
A method, comprising:
- forming a capacitor dielectric material on a first contact region formed in an active region of a semiconductor device;
- forming a dielectric material between a first gate electrode structure and a second gate electrode structure so as to provide a void in said dielectric material, said first and second gate electrode structures formed at least on said active region;
- forming a first contact opening in said dielectric material so as to connect to said void, said first contact opening being positioned laterally outside said active region;
- forming a second contact opening in said dielectric material so as to connect to a second contact region formed in said active region;
- and
- forming a first contact element in said first contact opening, a second contact element in said second contact opening and a capacitor electrode in said void by depositing a conductive material in said first and second contact openings.
A method of forming a capacitive structure of a semiconductor device, the method comprising:
- forming a first dielectric material on a shared transistor region of a first transistor and a second transistor, said shared transistor region being at least one of a drain region and a source region of said first and second transistors;
- forming a second dielectric material above said shared transistor region and between a gate electrode structure of said first transistor and a gate electrode structure of said second transistor, said dielectric material containing a void extending along a width of said shared transistor region;
- forming a contact opening in said second dielectric material laterally outside said shared transistor region, said contact opening connecting to said void;
- and
- filling an entirety of said void with a conductive material by depositing said conductive material into said contact opening.
Dependencies are inferred from the claim text.