Copper interconnect structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Shau-Lin Shue, Hsiang-Huan Lee, Ching-Fu Yeh
Life of this patent
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Abstract
A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier layer is conformally deposited on the sidewalls and the bottom of the opening. A first seed layer is conformally deposited on the first barrier layer. A second barrier layer is conformally deposited on the first seed layer. A second seed layer is conformally deposited on the second barrier layer and a conductive plug is deposited in the opening of the dielectric layer.
Claims20
A copper interconnect structure in a semiconductor device, comprising:
- an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom;
- a first barrier layer deposited on the sidewalls and the bottom of the opening;
- a first seed layer deposited on the first barrier layer within the opening;
- a second barrier layer deposited directly on and entirely covering the first seed layer within the opening;
- and
- a second seed layer deposited on the second barrier layer,
- wherein at least one of the first seed layer is doped onto the first barrier layer or the second seed layer is doped onto the second barrier layer.
A method for forming a copper interconnect structure in a semiconductor device, the method comprising:
- forming an opening in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom;
- depositing a first barrier layer on the sidewalls and the bottom of the opening;
- depositing a first seed layer on the first barrier layer within the opening;
- depositing a second barrier layer on and entirely covering the first seed layer within the opening;
- and
- depositing a second seed layer on the second barrier layer,
- wherein at least one of the first seed layer is doped onto the first barrier layer or the second seed layer is doped onto the second barrier layer.
Dependencies are inferred from the claim text.