US 8,941,189 B2Granted

Fin-shaped field effect transistor (finFET) structures having multiple threshold voltages (Vt) and method of forming

AssigneeInternational Business Machines Corporation

InventorsMurshed M. Chowdhury, Benjamin R. Cipriany, Brian J. Greene, Arvind Kumar

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Abstract

Various embodiments include fin-shaped field effect transistor (finFET) structures that enhance work function and threshold voltage (Vt) control, along with methods of forming such structures. The finFET structures can include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). In some embodiments, the PFET has fins separated by a first distance and the NFET has fins separated by a second distance, where the first distance and the second distance are distinct from one another. In some embodiments, the PFET or the NFET include fins that are separated from one another by non-uniform distances. In some embodiments, the PFET or the NFET include adjacent fins that are separated by distinct distances at their source and drain regions.

Claims18

Dependent claims

A fin-shaped field effect transistor structure (finFET) structure comprising:

a substrate having a first portion and a second portion separated by an isolation region;
a p-type field effect transistor region (PFET) over the first portion, the PFET including:
a plurality of PFET metal fins having a first PFET fin, a second PFET fin adjacent the first fin, and a third PFET fin adjacent the second fin, wherein the first PFET fin is separated from the second PFET by a first distance, and the second PFET fin is separated from the third PFET fin by the first distance;
and
an n-type field effect transistor region (NFET) over the second portion, the NFET including:
a plurality of NFET metal fins having a first NFET fin, a second NFET fin adjacent the first fin, and a third NFET fin adjacent the second fin, wherein the first NFET fin is separated from the second NFET by a second distance, and the second NFET fin is separated from the third NFET fin by the second distance, wherein the second distance is distinct from the first distance.

3 more elements

A fin-shaped field effect transistor structure (finFET) structure comprising:

a substrate having a first portion and a second portion separated by an isolation region;
a p-type field effect transistor region (PFET) over the first portion, the PFET including:
a plurality of metal PFET fins having a first PFET fin, a second PFET fin adjacent the first fin, and a third PFET fin adjacent the second fin, wherein the first PFET fin is separated from the second PFET by a first distance, and the second PFET fin is separated from the third PFET fin by a second distance distinct from the first distance;
and
an n-type field effect transistor region (NFET) over the second portion, the NFET including:
a plurality of metal NFET fins having a first NFET fin, a second NFET fin adjacent the first fin, and a third NFET fin adjacent the second fin, wherein the first NFET fin is separated from the second NFET by a third distance, and the second NFET fin is separated from the third NFET fin by a fourth distance distinct from the third distance,
wherein each of the plurality of PFET fins has a substantially uniform thickness, and wherein each of the plurality of NFET fins has a substantially uniform thickness.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/735,227Filed 7 Jan 2013
Published: US 2014/0191325 A110 Jul 2014
Granted: 27 Jan 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 84/853
Complementary IGFETs, e.g. CMOS: comprising FinFETs
H10D 84/0193
The components including complementary IGFETs, e.g. CMOS devices: the components including FinFETs
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D
Inorganic electric semiconductor devices