Back to results
US 8,941,183 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsCheong-Sik Yu, Choel-Hwyi Bae, Ju-Youn Kim, Chang-Min Hong
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device comprising, at least one SRAM cell, wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor.
Claims19
A semiconductor device comprising:
- at least one SRAM cell,
- wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and
- an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from a Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor, and
- wherein a nitrogen concentration of a gate insulating film of the pass-gate transistor is different from a nitrogen concentration of a gate insulating film of the pull-up transistor and a nitrogen concentration of a gate insulating film of the pull-down transistor.
1 more element
The semiconductor device comprising:
- at least one SRAM cell,
- wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and
- an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor, and
- wherein a gate electrode of each of the transistors comprises a first metal electrode formed on the gate insulating film and a second metal electrode formed on the first metal electrode, and
- a thickness of the second metal electrode of the pass-gate transistor is different from a thickness of the second metal electrode of the pull-up transistor and a thickness of the second metal electrode of the pull-down transistor.
2 more elements
A semiconductor device comprising:
- at least one SRAM cell, comprising:
- a pull-up transistor,
- a pull-down transistor, and
- a pass-gate transistor,
- wherein a nitrogen concentration of a gate insulating film of the pass-gate transistor is different from a nitrogen concentration of a gate insulating film of the pull-up transistor and a nitrogen concentration of a gate insulating film of the pull-down transistor.
2 more elements
An electronic system comprising a semiconductor device, including:
- at least one SRAM device comprising:
- a pull-up transistor,
- a pull-down transistor, and
- a pass-gate transistor, wherein the nitrogen characteristics of the pass-gae transistor are different from nitrogen characteristics of the pull-up transistor and pull-down transistor;
- a controller;
- an input/output (I/O) device;
- an interface;
- and
- a bus configured to interconnect one or more of the controller, the I/O device, and the interface.
6 more elements
Dependencies are inferred from the claim text.