Systems and methods for dry etching a photodetector array
AssigneeThe Boeing Company
InventorPierre-Yves Delaunay
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Abstract
Systems and methods for dry eteching a photodetector array based on InAsSb are provided. A method for fabricating an array of photodetectors includes receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors, and dry etching the at least one trench with a plasma including BrCl3 and Ar.
Claims20
A method for fabricating an array of photodetectors, said method comprising:
- receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors;
- and
- dry etching the at least one trench with a plasma including BrCl3 and Ar.
A method of imaging using a photodetector array, said method comprising:
- providing a photodetector array;
- and
- receiving wavelengths by a first photodetector of the photodetector array and a second photodetector of the photodetector array, wherein a trench is formed between the first photodetector and the second photodetector, the trench formed by dry etching using BrCl3 and Ar.
A photodetector array for use in imaging, said photodetector array comprising:
- a first photodetector formed from InAsSb;
- a second photodetector formed from InAsSb;
- and
- a trench formed between the first photodetector and the second photodetector such that the first photodetector is electrically insulated from the second photodetector, wherein the trench is formed using BrCl3 and Ar.
A photodetector array for use in imaging, said photodetector array comprising:
- a first photodetector formed from InAsSb;
- a second photodetector formed from InAsSb;
- and
- a trench formed between the first photodetector and the second photodetector such that the first photodetector is electrically insulated from the second photodetector.
Dependencies are inferred from the claim text.