Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToshihiko Takeuchi, Kosei Noda
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Abstract
To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.
Claims7
A semiconductor element comprising:
- an oxide semiconductor film over an insulating surface;
- a gate insulating film over the oxide semiconductor film;
- and
- a gate electrode over the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein a side surface of the gate insulating film and a side surface of the gate electrode are aligned with each other,
- wherein the gate insulating film comprises a first region which includes the side surface of the gate insulating film, and a second region which does not include the side surface of the gate insulating film, and
- wherein a nitrogen content of the first region is higher than a nitrogen content of the second region.
Dependencies are inferred from the claim text.