Semiconductor devices and method of fabricating the same

Abstract

In a method of fabricating a semiconductor device, a first sacrificial layer, a first insulating layer, and a second sacrificial layer are successively provided on a substrate. The second sacrificial layer, the first insulating layer, and the first sacrificial layer are patterned to define an opening exposing a portion of the substrate and successively forming second sacrificial patterns, capping patterns, and first sacrificial patterns on the substrate. A second insulating layer is conformally formed at inner sidewalls and a bottom of the opening. The second insulating layer and the second sacrificial patterns are etched to form spacers on sidewalls of the first sacrificial patterns and to remove the second sacrificial patterns. A wiring pattern is provided to fill the opening in which the spacers are formed. The first sacrificial patterns are then vaporized.

Dependencies are inferred from the claim text.